PBYR3035PTF Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR3045PTF series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) MAX. MAX. MAX. 45PTF 45 0.65 20 UNIT V V A 35PTF 40PTF 35 40 0.65 20 0.65 20 PINNING - SOT199 PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) PIN CONFIGURATION case SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 30 135 150 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 113 ˚C Output current (both diodes conducting) RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. square wave; δ = 0.5; Ths ≤ 109 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature -65 - 91 2 2 175 150 A2s A A ˚C ˚C August 1996 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless...