PBYR635CT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes Schottky barrier Features - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYR645CT series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF ≤ 0.6V SOT82 DESCRIPTION a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. PINNING PIN 1 2 3 tab anode 1 cathode anode 2 cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR6 Tmb ≤ 100 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 35CT 40CT 45CT 35 40 45 35 35 40 40 10 10 75 82 1 150 150 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 100 5 4 K/W K/W K/W May 1998 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 5 A; Tj =...