PBYR645CTD Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes Schottky barrier Features - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYR645CTD series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 6 A VF ≤ 0.6 V SOT428 DESCRIPTION tab a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CTD series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab anode 1 cathode1 anode 2 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR6 Tmb ≤ 113 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTD 40 40 40 6 6 65 70 1 150 175 45CTD 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1 it is not possible to make connection to pin 2 of the SOT428 package September 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes pcb mounted, minimum footprint, FR4 board PBYR645CTD...