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PCF85103C-2 - 256 x 8-bit CMOS EEPROMs

General Description

The PCF85103C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage.

By using an internal redundant storage code, it is fault tolerant to single bit errors.

Key Features

  • s Low power CMOS: x 2.0 mA maximum operating current x maximum standby current 10 µA (at 6.0 V), typical 4 µA s Non-volatile storage of 2 kbits organized as 256 × 8-bit s Single supply with full operation down to 2.5 V s On-chip voltage multiplier s Serial input/output I2C-bus s Write operations: x byte write mode x 8-byte page write mode (minimizes total write time per byte) s Read operations: x sequential read x random read s Internal timer for writing (no external components) s Internal power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCF85103C-2 256 × 8-bit CMOS EEPROM with I2C-bus interface Rev. 02 — 09 May 2002 Product data 1. Description The PCF85103C-2 is a floating gate Electrically Erasable Programmable Read Only Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an internal redundant storage code, it is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier. Data bytes are received and transmitted via the serial I2C-bus. Up to eight PCF85103C-2 devices may be connected to the I2C-bus. Chip select is accomplished by three address inputs (A0, A1 and A2).