NXP Semiconductors PDTA114TE
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | PDTA114TE |
|---|---|
| Datasheet | PDTA114TE Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistor R1 (typ. 10 kΩ)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuit applications● Inverter circuit configurations without use of an external resistor. 1 Top view 2 handbook, 4 columns PDTA114TE 3 3 R1 1 2 MAM359 Fig.1 Simplified outline (SC-75) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114TE. 1 3 2 MARKING TYPE NUMBER PDTA114TE MARKING CODE 11 PINNING PIN 1 2 3DESCRIPTION
base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. −50 −100 −100 150 − 13 kΩ UNIT...
