NXP Semiconductors PDTA114TT
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | PDTA114TT |
|---|---|
| Datasheet | PDTA114TT Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistor R1 (typ. 10 kΩ)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of an external resistor. 1 Top view 2 MAM286 PDTA114TT handbook, 4 columns 3 3 R1 1 2 Fig.1 Simplified outline (SOT23) and symbol.
DESCRIPTION
PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114TT. 1 3 2 MARKING TYPE NUMBER PDTA114TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗11 PINNING PIN 1 2 3DESCRIPTION
base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base vol...
