Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC124XEF NPN resistor-equipped transistor
Preliminary specification Supersedes data of 1998 Nov 11 1999 May 18
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistor
Features
- Power dissipation parable to SOT23
- Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively)
- Simplification of circuit design
- Reduces number of ponents and board space. APPLICATIONS
- Especially suitable for space reduction in interface and driver circuits
- Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490)...
