PDTD123ET Datasheet | NXP Semiconductors

description 500 m A NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PDTD123EK SOT346 PDTD123ES[1] SOT54 SOT23 JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP plement PDTB123EK PDTB123ES PDTB123ET 1.2 Features - Built-in bias resistors - Simplifies circuit design - 500 m A output current capability - Reduces ponent count - Reduces pick and place costs - ±10 % resistor ratio tolerance 1.3 Applications - Digital application in automotive and industrial segments - Controlling IC inputs - Cost saving alternative for BC817 series in digital applications - Switching loads 1.4 Quick reference data Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.54 0.9 Typ 2.2 1.0 Max Unit 50 V 500 m A 2.86 kΩ 1.1 NXP Semiconductors PDTD123E series NPN 500 m A resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2. Pinning information Table 3. Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND...