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PDTD123YT-Q - 500mA NPN resistor-equipped transistor

General Description

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Built-in bias resistors.
  • Simplifies circuit design.
  • 500 mA output current capability.
  • Reduces component count.
  • Reduces pick and place costs.
  • ± 10 % resistor ratio tolerance.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number PDTD123YT-Q
Manufacturer Nexperia
File Size 216.09 KB
Description 500mA NPN resistor-equipped transistor
Datasheet download datasheet PDTD123YT-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PDTD123YT-Q 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ 22 July 2022 Product data sheet 1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB123YT-Q 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • 500 mA output current capability • Reduces component count • Reduces pick and place costs • ± 10 % resistor ratio tolerance • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Digital application in automotive and industrial segment • Controlling IC inputs • Cost-saving alternative to BC817-Q series in digital applications • Switching loads 4. Quick reference data Table 1.