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PDTD123YT - 50V resistor-equipped transistor

General Description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD123YT.

Key Features

  • 500 mA output current capability.
  • Built-in bias resistors.
  • Simplifies circuit design.
  • Reduces component count.
  • Reduces pick and place costs.
  • ±10 % resistor ratio tolerance.
  • AEC-Q101 qualified 1.3.

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Other Datasheets by NXP Semiconductors

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PDTD123Y 50V resistor-equipped transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PDTB123YT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 3 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123YT. 1.2 Features and benefits „ 500 mA output current capability „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance „ AEC-Q101 qualified 1.3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.4 Quick reference data Table 1.