PEMH10 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH10 NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Features - 300 mW total power dissipation - Very small 1.6 × 1.2 mm ultra thin package - Self alignment during soldering due to straight leads - Replaces two SC-75/SC-89 packaged transistors on same PCB area - Reduces required PCB area - Reduced pick and place costs. APPLICATIONS - General purpose switching and amplification - Inverter and interface circuits - Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666...