PESD12VS2UQ Datasheet | NXP Semiconductors

FEATURES - Uni-directional ESD protection of up to two lines - Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs - Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A - Low reverse leakage current: IRM < 1 n A - ESD protection > 30 k V - IEC 61000-4-2; level 4 (ESD) - IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS - puters and peripherals - munication systems - Audio and video equipment - High speed data lines - Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from Electro Static Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1. - = p : made in Hong Kong. - = t : made in Malaysia. - = W : made in China. MARKING CODE(1) - E1 - E2 - E3 - E4 - E5 PESDx S2UQ series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 mon anode DESCRIPTION VALUE 3.3, 5, 12, 15 and 24 UNIT V 200, 150, 38, 32 p F and 23 2 .. 3 1 3 2 2 001aaa732 sym022 Fig.1 Simplified outline (SOT663) and symbol. 2004 Apr 27 Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power peak pulse current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ .. PESDx S2UQ series DESCRIPTION plastic surface mounted package; 3...