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PESD12VV1BL - Very low capacitance bidirectional ESD protection diode

Description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients.

The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

Features

  • Bidirectional ESD protection of one line.
  • ESD protection up to 30 kV.
  • Low diode capacitance Cd = 17 pF.
  • IEC 61000-4-2; level 4 (ESD).
  • Rated peak pulse power: PPPM = 290 W.
  • IEC 61000-4-5 (surge); IPPM = 7.8 A.
  • Ultra low leakage current IRM < 1 nA.
  • AEC-Q101 qualified 1.3.

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Datasheet Details

Part number PESD12VV1BL
Manufacturer NXP
File Size 301.16 KB
Description Very low capacitance bidirectional ESD protection diode
Datasheet download datasheet PESD12VV1BL Datasheet
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Full PDF Text Transcription

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PESD12VV1BL Very low capacitance bidirectional ESD protection diode Rev. 2 — 18 March 2013 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Bidirectional ESD protection of one line  ESD protection up to 30 kV  Low diode capacitance Cd = 17 pF  IEC 61000-4-2; level 4 (ESD)  Rated peak pulse power: PPPM = 290 W  IEC 61000-4-5 (surge); IPPM = 7.8 A  Ultra low leakage current IRM < 1 nA  AEC-Q101 qualified 1.
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