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PESD3V3S2UQ - (PESDxS2UQ) Double Esd Protection Diode

Download the PESD3V3S2UQ datasheet PDF. This datasheet also covers the PESD5V0S2UQ variant, as both devices belong to the same (pesdxs2uq) double esd protection diode family and are provided as variant models within a single manufacturer datasheet.

General Description

Uni-directional double ESD protection diodes in a SOT663 plastic package.

Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.

MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Note 1.

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Key Features

  • Uni-directional ESD protection of up to two lines.
  • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A.
  • Low reverse leakage current: IRM < 1 nA.
  • ESD protection > 30 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PESD5V0S2UQ_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D793 www.DataSheet4U.com PESDxS2UQ series Double ESD protection diodes in SOT663 package Product specification Supersedes data of 2003 Dec 15 2004 Apr 27 Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A • Low reverse leakage current: IRM < 1 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports.