Part PESD3V3S2UAT
Description Double ESD protection diodes in SOT23 package
Category Diode
Manufacturer NXP Semiconductors
Size 122.38 KB
NXP Semiconductors
PESD3V3S2UAT

Overview

  • Unidirectional ESD protection of up to two lines
  • Common-cathode configuration
  • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
  • Ultra-low reverse leakage current: IRM < 700 nA
  • ESD protection > 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS
  • Computers and peripherals
  • Communication systems