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PESD3V3S2UAT - Double ESD protection diodes in SOT23 package

General Description

Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package.

Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and other transients.

Key Features

  • Unidirectional ESD protection of up to two lines.
  • Common-cathode configuration.
  • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A.
  • Ultra-low reverse leakage current: IRM < 700 nA.
  • ESD protection > 30 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package FEATURES • Unidirectional ESD protection of up to two lines • Common-cathode configuration • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs. PINNING APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • Data lines • CAN bus protection.