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PESD3V3S2UAT

Manufacturer: NXP Semiconductors
PESD3V3S2UAT datasheet preview

Datasheet Details

Part number PESD3V3S2UAT
Datasheet PESD3V3S2UAT_PhilipsSemiconductors.pdf
File Size 122.38 KB
Manufacturer NXP Semiconductors
Description Double ESD protection diodes in SOT23 package
PESD3V3S2UAT page 2 PESD3V3S2UAT page 3

PESD3V3S2UAT Overview

Unidirectional double ESD protection diodes in mon cathode configuration in the SOT23 plastic package. Designed to protect up to two transmission or data lines against damage from ElectroStatic Discharge (ESD) and other transients. MARKING TYPE NUMBER PESD3V3S2UAT PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT Note.

PESD3V3S2UAT Key Features

  • Unidirectional ESD protection of up to two lines
  • mon-cathode configuration
  • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
  • Ultra-low reverse leakage current: IRM < 700 nA
  • ESD protection > 30 kV
  • IEC 61000-4-2; level 4 (ESD)
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