• Part: PESD5V0S1BA
  • Description: Low capacitance bidirectional ESD protection diodes
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 117.71 KB
PESD5V0S1BA Datasheet (PDF) Download
NXP Semiconductors
PESD5V0S1BA

Key Features

  • Bi-directional ESD protection of one line
  • Low diode capacitance
  • Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs
  • Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A
  • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
  • ESD protection 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • Cellular handsets and accessories
  • Portable electronics
  • puters and peripherals