PESD5V0S1BA Datasheet Low Capacitance Bidirectional Esd Protection Diodes

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product speciﬁcation 2004 Mar 22 www.DataSheet4U.

Datasheet Details

Part number	PESD5V0S1BA
Manufacturer	NXP Semiconductors
File Size	117.71 KB
Description	Low capacitance bidirectional ESD protection diodes
Datasheet	PESD5V0S1BA_PhilipsSemiconductors.pdf

General Description

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance;

f = 1 MHz;

VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small SOD323 plastic package, designed to protect one data line from ElectroStatic Discharge (ESD) damage.

Key Features

Bi-directional ESD protection of one line.
Low diode capacitance.
Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs.
Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A.
Ultra low leakage current: IRM = 5 nA at VRWM = 5 V.
ESD protection 30 kV.
IEC 61000-4-2; level 4 (ESD).
IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs.

PESD5V0S1BA Distributor

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