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PESD5V0S1BA

Manufacturer: NXP Semiconductors
PESD5V0S1BA datasheet preview

Datasheet Details

Part number PESD5V0S1BA
Datasheet PESD5V0S1BA_PhilipsSemiconductors.pdf
File Size 117.71 KB
Manufacturer NXP Semiconductors
Description Low capacitance bidirectional ESD protection diodes
PESD5V0S1BA page 2 PESD5V0S1BA page 3

PESD5V0S1BA Overview

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; The marking bar indicates pin 1 (cathodes are connected internally). MARKING TYPE NUMBER PESD5V0S1BA ORDERING INFORMATION MARKING CODE E6 Fig.1 Simplified outline (SOD323) and symbol.

PESD5V0S1BA Key Features

  • Bi-directional ESD protection of one line
  • Low diode capacitance
  • Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs
  • Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A
  • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V
  • ESD protection 30 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs

PESD5V0S1BA from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
nexperia Logo PESD5V0S1BA Bidirectional ESD protection diode nexperia
msksemi PESD5V0S1BB Transient Voltage Suppressors ESD Protection Diodes msksemi
nexperia Logo PESD5V0S1BB Bidirectional ESD protection diode nexperia
Leiditech Logo PESD5V0S1BL TVS DIODE Leiditech
SXSEMI PESD5V0S1BL Transient Voltage Suppressors SXSEMI
NXP Semiconductors logo - Manufacturer

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