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PESD5V0S1BB Datasheet Low Capacitance Bidirectional Esd Protection Diodes

Manufacturer: NXP Semiconductors

Overview: .. DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PESD5V0S1BB Low capacitance bi-directional ESD protection diode in SOD523 package Product specification 2004 Mar 04 ..

General Description

Low capacitance ESD protection diode array in the ultra small SOD523 plastic package designed to protect one data line from ElectroStatic Discharge (ESD) damage.

MARKING TYPE NUMBER PESD5V0S1BB ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD5V0S1BB − DESCRIPTION plastic surface mounted package;

2 leads MARKING CODE L7 001aaa205 PESD5V0S1BB QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER diode capacitance number of protected lines PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION VALUE 35 1 UNIT V pF reverse standoff voltage 5 1 2 1 sym010 2 Fig.1 Simplified outline (SOD523) and symbol.

Key Features

  • Bi-directional ESD protection of one line.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 130 W at tp = 8/20 µs.
  • Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A.
  • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V.
  • ESD protection 30 kV bi-directional.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC-61000-4-5 (surge); Ipp = 12 A at tp = 8/20 µs.

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