PHB125N06LT Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device.
PHB125N06LT is TrenchMOS transistor Logic level FET manufactured by NXP Semiconductors.
| Part Number | Description |
|---|---|
| PHB125N06T | TrenchMOS transistor Standard level FET |
| PHB12NQ15T | N-channel TrenchMOS transistor |
| PHB100N03LT | N-channel enhancement mode field-effect transistor |
| PHB101NQ03LT | TrenchMOS logic level FET |
| PHB108NQ03LT | TrenchMOS logic level FET |
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device.