PHB125N06LT
Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
Key Features
- very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV
- It is intended for use in DC-DC converters and general purpose switching applications
- 55 75 250 175 8 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION
