PHB125N06T Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device.
- Part: PHB125N06T
- Manufacturer: NXP Semiconductors
- Size: 67.97 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| PHB125N06LT | TrenchMOS transistor Logic level FET |
| PHB12NQ15T | N-channel TrenchMOS transistor |
| PHB100N03LT | N-channel enhancement mode field-effect transistor |
| PHB101NQ03LT | TrenchMOS logic level FET |
| PHB108NQ03LT | TrenchMOS logic level FET |