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PHB13N40E - PowerMOS transistors Avalanche energy rated

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP13N40E, PHB13N40E, PHW13N40E SYMBOL d QUICK.

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Datasheet preview – PHB13N40E

Datasheet Details

Part number PHB13N40E
Manufacturer NXP
File Size 104.85 KB
Description PowerMOS transistors Avalanche energy rated
Datasheet download datasheet PHB13N40E Datasheet
Additional preview pages of the PHB13N40E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP13N40E, PHB13N40E, PHW13N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 13.7 A RDS(ON) ≤ 0.35 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP13N40E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW13N40E is supplied in the SOT429 (TO247) conventional leaded package.
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