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PHB100N03LT - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHB100N03LT in SOT404 (D2-PAK).

2.

Key Features

  • s s s s s TrenchMOS™ technology Low on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 M3D166 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHB100N03LT in SOT404 (D2-PAK). 2. Features s s s s s TrenchMOS™ technology Low on-state resistance Avalanche ruggedness rated Logic level compatible Surface mount package. 3. Applications c c s DC to DC converters s Synchronous rectification. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT404, simplified outline and symbol Description gate (g) mb Simplified outline Symbol d drain (d) source (s) connected to drain (d) [1] g 2 1 3 MBK116 MBB076 s SOT404 (D2-PAK) [1] 1.