PHB112N06T
PHB112N06T is N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors.
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Rev. 01
- 07 March 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK).
2. Features s Fast switching s Very low on-state resistance.
3. Applications s General purpose switching s Switched mode power supplies. c
4. Pinning information c
Table 1: Pin 1 2 3 mb
Pinning
- SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
MBK106
Simplified outline mb...
