PHB112N06T Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK).
PHB112N06T is N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors.
| Part Number | Description |
|---|---|
| PHB11N03LT | N-channel TrenchMOS transistor Logic level FET |
| PHB11N06LT | N-channel TrenchMOS transistor Logic level FET |
| PHB11N50E | PowerMOS transistors Avalanche energy rated |
| PHB100N03LT | N-channel enhancement mode field-effect transistor |
| PHB101NQ03LT | TrenchMOS logic level FET |
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK).