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PHB112N06T - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK).

2.

Key Features

  • s Fast switching s Very low on-state resistance. 3.

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Full PDF Text Transcription (Reference)

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PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features s Fast switching s Very low on-state resistance. 3. Applications s General purpose switching s Switched mode power supplies. c 4. Pinning information c Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 MBK106 Simplified outline mb mb Symbol [1] d g 2 3 MBK116 MBB076 s 1 2 3 SOT78 (TO-220AB) [1] 1.