Datasheet Details
| Part number | PHB11N50E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 102.94 KB |
| Description | PowerMOS transistors Avalanche energy rated |
| Datasheet | PHB11N50E_PhilipsSemiconductors.pdf |
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Overview: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy.
| Part number | PHB11N50E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 102.94 KB |
| Description | PowerMOS transistors Avalanche energy rated |
| Datasheet | PHB11N50E_PhilipsSemiconductors.pdf |
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N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.
and puter monitor power supplies, d.c.
to d.c.
| Part Number | Description |
|---|---|
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| PHB11N06LT | N-channel TrenchMOS transistor Logic level FET |
| PHB112N06T | N-channel enhancement mode field-effect transistor |
| PHB100N03LT | N-channel enhancement mode field-effect transistor |
| PHB101NQ03LT | TrenchMOS logic level FET |
| PHB108NQ03LT | TrenchMOS logic level FET |
| PHB10N40 | PowerMOS transistor |
| PHB125N06LT | TrenchMOS transistor Logic level FET |
| PHB125N06T | TrenchMOS transistor Standard level FET |
| PHB12NQ15T | N-channel TrenchMOS transistor |