PHB11N06LT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Very low on-state resistance - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is...