PHB11N03LT Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Low on-state resistance - Fast switching - Logic level patible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters - switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N03LT is supplied in the SOT428 (DPAK) surface mounting...