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PHB18NQ10T - N-channel TrenchMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s.

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Datasheet preview – PHB18NQ10T

Datasheet Details

Part number PHB18NQ10T
Manufacturer NXP
File Size 121.82 KB
Description N-channel TrenchMOS transistor
Datasheet download datasheet PHB18NQ10T Datasheet
Additional preview pages of the PHB18NQ10T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
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