PHB18NQ10T
PHB18NQ10T is N-Channel MOSFET manufactured by Nexperia.
description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- DC-to-DC converters
- Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol VDS
Parameter drain-source voltage
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V
Ptot total power
Tmb = 25 °C dissipation
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 9 A; Tj = 25 °C
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 18 A; VDS = 80 V; Tj = 25 °C
Min Typ Max Unit
- - 100 V
- - 18 A
- - 79 W
- 80 90 mΩ
- 8
- n C
Nexperia
N-channel Trench MOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information
Symbol Description
Simplified outline
G gate D drain[1] mb
S source
D mounting base; connected to...
