PHB42N03T Datasheet PDF - NXP TrenchMOS transistor Standard level FET Specs

PHB42N03T - TrenchMOS transistor Standard level FET

Datasheet Summary

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

Features

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching.

Datasheet Details

Part number	PHB42N03T
Manufacturer	NXP
File Size	66.18 KB
Description	TrenchMOS transistor Standard level FET
Datasheet	PHB42N03T Datasheet
Additional preview pages of the PHB42N03T datasheet.

📁 Similar Datasheet

PHB45NQ10T - N-channel MOSFET (nexperia)

PHB45NQ15T - N-channel MOSFET (nexperia)

PHB45NQ15T - N-channel TrenchMOS standard level FET (NXP Semiconductors)

PHB-5R0H155-R - Supercapacitors (EATON)

PHB-5R0H255-R - Supercapacitors (EATON)

PHB-5R0H305-R - Supercapacitors (EATON)

PHB-5R0H505-R - Supercapacitors (EATON)

PHB-5R0V155-R - Supercapacitors (EATON)

PHB-5R0V255-R - Supercapacitors (EATON)

PHB-5R0V305-R - Supercapacitors (EATON)

Full PDF Text Transcription

Click to expand full text

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB42N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.

Published: Mar 22, 2005 |