PHB45N03LT Datasheet PDF - NXP TrenchMOS transistor Logic level FET Specs

PHB45N03LT - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Features

’Trench’ technology.
Very low on-state resistance.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance.
Surface mounting package PHB45N03LT SYMBOL d QUICK.

Datasheet Details

Part number	PHB45N03LT
Manufacturer	NXP
File Size	61.45 KB
Description	TrenchMOS transistor Logic level FET
Datasheet	PHB45N03LT Datasheet
Additional preview pages of the PHB45N03LT datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Surface mounting package PHB45N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 45 A g RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is supplied in the SOT404 surface mounting package.

Published: Mar 22, 2005 |