Datasheet4U Logo Datasheet4U.com

PHB4N60E - PowerMOS transistors Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP4N60E, PHB4N60E SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Other Datasheets by NXP
  • PHB4N40E - PowerMOS transistors Avalanche energy rated
  • PHB4ND40E - PowerMOS transistors FREDFET/ Avalanche energy rated
  • PHB42N03LT - TrenchMOS transistor Logic level FET
  • PHB42N03T - TrenchMOS transistor Standard level FET
  • PHB44N06LT - TrenchMOS transistor Logic level FET
  • PHB44N06T - TrenchMOS transistor Standard level FET
  • PHB45N03LT - TrenchMOS transistor Logic level FET
  • PHB45N03LTA - N-channel enhancement mode field-effect transistor

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP4N60E, PHB4N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 4.5 A RDS(ON) ≤ 2.5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB4N60E is supplied in the SOT404 surface mounting package.
Published: |