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PHB/PHD66NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 06 — 2 August 2004
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold
s Low on-state resistance.
1.3 Applications
s DC-to-DC converters
s General purpose switching.
1.4 Quick reference data
s VDS ≤ 25 V s RDSon ≤ 10.5 mΩ
s ID ≤ 66 A s Qgd = 3.6 nC (typ).
2. Pinning information
Table 1: Discrete pinning Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base;
connected to drain (d)
Simplified outline
[1] mb
mb
2 13
SOT404 (D2-PAK)
2 13
Top view
SOT428 (D-PAK)
[1] It is not possible to make a connection to pin 2 of the SOT404 and SOT428 packages.
PHB66NQ03LT Datasheet
