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PHB66NQ03LT - N-channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PHB66NQ03LT
Manufacturer nexperia
File Size 683.48 KB
Description N-channel MOSFET
Datasheet download datasheet PHB66NQ03LT Datasheet
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PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 — 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ General purpose switching 1.4 Quick reference data Table 1.
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