Datasheet Summary
N-channel TrenchMOS logic level FET
Rev. 07
- 30 January 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for logic level gate drive sources
1.3 Applications
- DC-to-DC convertors
- General purpose switching
1.4 Quick reference data
Table 1. Quick reference
Symbol VDS ID Ptot
Parameter drain-source voltage drain current total...
