PHD13003C
PHD13003C is NPN power transistor manufactured by NXP Semiconductors.
description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package
1.2 Features and benefits
- Fast switching
- High typical DC current gain
- High voltage capability
- Integrated anti-parallel E-C diode
1.3 Applications
- pact fluorescent lamps (CFL)
- Low power electronic lighting ballasts
- Off-line self-oscillating power supplies (SOPS) for battery charging
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current DC
Ptot total power
Tlead ≤ 25 °C; see Figure 1 dissipation
VCESM collector-emitter VBE = 0 V peak voltage
Static characteristics h FE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C
Min Typ Max Unit
- - 1.5 A
- - 2.1 W
- - 700 V
8 17 25
NXP Semiconductors
NPN power transistor with integrated diode
2. Pinning information
Table 2. Pin 1 2 3
Pinning information Symbol Description
B base C collector E emitter
Simplified outline
Graphic symbol
3. Ordering information
SOT54 (TO-92)
E sym131
Table 3. Ordering information
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