PHD13003C
PHD13003C is NPN power transistor manufactured by WeEn.
description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package.
2. Features and benefits
- High typical DC current gain
- Fast switching
- High voltage capability
- Integrated anti-parallel E-C diode
3. Applications
- pact fluorescent lamps (CFL)
- Low power electronic lighting ballasts
- Off-line self-oscillating power supplies (SOPS) for battery charging
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VCESM collector-emitter peak voltage
IC collector current
Ptot total power dissipation
Symbol Parameter
Static characteristics h FE DC current gain
Conditions
VBE = 0 V DC Tlead ≤ 25 °C; Fig. 1 Conditions
IC = 0.5 A; VCE = 2 V; Tj = 25 °C
Values
Unit
700 V
1.5 2.1 Min Typ
A W Max Unit
8 17 25
We En Semiconductors
NPN power transistor with integrated diode
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1B base
2C collector
3E emitter
Simplified outline
Graphic symbol
321 TO-92 (SOT54)
6. Ordering information
Table 3. Ordering...
