Datasheet4U Logo Datasheet4U.com

PHD3N20E - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.

📥 Download Datasheet

Datasheet preview – PHD3N20E

Datasheet Details

Part number PHD3N20E
Manufacturer NXP
File Size 56.82 KB
Description PowerMOS transistor
Datasheet download datasheet PHD3N20E Datasheet
Additional preview pages of the PHD3N20E datasheet.

📁 Similar Datasheet

  • PHD13003C - NPN power transistor (WeEn)
  • PHD16N03LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • PHD16N03T - TrenchMOS standard level FET (NXP Semiconductors)
  • PHD20N06T - N-channel TrenchMOS standard level FET (nexperia)
  • PHD22NQ20T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PHD44N06LT - N-Channel MOSFET (INCHANGE)
  • PHD50N06LT - N-Channel MOSFET (INCHANGE)
  • PHD55N03 - N-Channel MOSFET (INCHANGE)
  • PHD55N03LTA - N-Channel MOSFET (Philips)
  • PHD71NQ03LT - TrenchMOS logic level FET (NXP Semiconductors)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 200 3.5 50 1.
Published: |