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PHD34NQ10T - N-channel TrenchMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s.

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Datasheet preview – PHD34NQ10T

Datasheet Details

Part number PHD34NQ10T
Manufacturer NXP
File Size 111.34 KB
Description N-channel TrenchMOS transistor
Datasheet download datasheet PHD34NQ10T Datasheet
Additional preview pages of the PHD34NQ10T datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP34NQ10T, PHB34NQ10T PHD34NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 35 A g RDS(ON) ≤ 40 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP34NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB34NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD34NQ10T is supplied in the SOT428 (DPAK) surface mounting package.
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