PHD38N02LT Datasheet | NXP Semiconductors

Description N-channel logic level field-effect transistor in a plastic package using Trench MOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). 1.2 Features s Low on-state resistance s 2.5 V gate drive. 1.3 Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT404 and SOT428 simplified outlines and symbol Simplified outline [1] mb Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d g s MBB076 2 1 Top view 3 MBK091 2 1 3 MBK116 SOT428 (D-PAK) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. Philips Semiconductors PHB/PHD38N02LT Trench MOS™ logic level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 25 °C ≤ Tj ≤ 175 o C o C; Min RGS = 20 kΩ - 55 - 55 - Max 20 20 12 44.7 31.6 179 57.6 +175 +175 44.7 179 Unit V V V A A A W °C °C A A Source-drain diode 9397 750 11614 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 - 30 June 2003 2 of 13 Philips Semiconductors PHB/PHD38N02LT Trench MOS™ logic level...