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PHD38N02LT - TrenchMOS logic level FET

General Description

N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK).

Key Features

  • s Low on-state resistance s 2.5 V gate drive. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHB/PHD38N02LT TrenchMOS™ logic level FET Rev. 01 — 30 June 2003 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). 1.2 Features s Low on-state resistance s 2.5 V gate drive. 1.3 Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ 2.