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PHD36N03LT - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • I Logic level compatible I Low gate charge 1.3.

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www.DataSheet4U.com PHD/PHP36N03LT N-channel TrenchMOS logic level FET Rev. 02 — 8 June 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain G [1] Simplified outline mb mb Symbol D 2 1 3 1 2 3 mbb076 S SOT428 (DPAK) [1] SOT78 (3-lead TO-220AB) It is not possible to make a connection to pin 2 of the SOT428 package.