Datasheet4U Logo Datasheet4U.com

PHF9NQ20T - N-channel TrenchMOS transistor

General Description

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL d QUICK.

📥 Download Datasheet

Other Datasheets by NXP Semiconductors

Part Number Description
PHF9NQ20 N-channel TrenchMOS transistor
PHF14NQ20T N-channel TrenchMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 5.2 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.