Datasheet Summary
Philips Semiconductors
Product specification
N-channel TrenchMOSTM transistor
Features
- Low on-state resistance
- Fast switching
- Low profile surface mount package
SYMBOL d
QUICK REFERENCE DATA VDS = 100 V ID = 5 A g
RDS(ON) ≤ 50 mΩ (VGS = 10 V) s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- Motor and relay drivers
- d.c. to d.c. converters The PHK5NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING
PIN 1-3 4 5-8 DESCRIPTION source gate drain
SOT96-1 (SO8)
8 7 6 5 pin 1 index
LIMITING VALUES
Limiting values in accordance with the Absolute...