PHKD13N03LT Datasheet | NXP Semiconductors

M3D315 Dual TrenchMOS™ logic level FET Rev. 01 - 23 June 2003 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHKD13N03LT in SOT96-1 (SO8). 1.2 Features s Low gate charge s Low on-state resistance s Surface mount package s Fast switching. 1.3 Applications s Portable appliances s Lithium-ion battery chargers s Notebook puters s DC-to-DC converters. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 3.57 W s ID ≤ 10.4 A s RDSon ≤ 20 mΩ 2. Pinning information Table 1: Pin 1 2 3 4 5,6 7,8 Pinning - SOT96-1 (SO8), simplified outline and symbol Description...