PHKD13N03LT - Dual N-channel TrenchMOS logic level FET

Nexperia

General Description

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

Low conduction losses due to low on-state resistance.
Simple gate drive required due to low gate charge.
Suitable for high frequency.

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PHKD13N03LT dual n-channel trenchmos logic level fet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PHKD13N03LT
Manufacturer	Nexperia
File Size	776.66 KB
Description	Dual N-channel TrenchMOS logic level FET
Datasheet	PHKD13N03LT Datasheet

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PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 5 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Simple gate drive required due to low gate charge  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  DC-to-DC convertors  Lithium-ion battery applications  Notebook computers  Portable equipment 1.4 Quick reference data Table 1.