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PHKD13N03LT - Dual N-channel TrenchMOS logic level FET

Datasheet Summary

Description

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance.
  • Simple gate drive required due to low gate charge.
  • Suitable for high frequency.

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Datasheet Details

Part number PHKD13N03LT
Manufacturer nexperia
File Size 776.66 KB
Description Dual N-channel TrenchMOS logic level FET
Datasheet download datasheet PHKD13N03LT Datasheet
Additional preview pages of the PHKD13N03LT datasheet.

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    Full PDF Text Transcription

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    PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 5 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Simple gate drive required due to low gate charge  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  DC-to-DC convertors  Lithium-ion battery applications  Notebook computers  Portable equipment 1.4 Quick reference data Table 1.
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