Part PHKD13N03LT
Description Dual N-channel TrenchMOS logic level FET
Manufacturer Nexperia
Size 776.66 KB
Nexperia

PHKD13N03LT Overview

Description

plastic small outline package; 8 leads; body width 3.9 mm Version SOT96-1 Table 4. Limiting values In accordance with the Absolute Maximu.

Key Features

  • Low conduction losses due to low on-state resistance
  • Simple gate drive required due to low gate charge
  • Suitable for high frequency applications due to fast switching characteristics 1.3 Applications
  • DC-to-DC convertors
  • Lithium-ion battery applications
  • Notebook computers
  • Portable equipment 1.4 Quick reference data Table
  • Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage ID drain current Tj ≥ 25 °C; Tj ≤ 150 °C
  • 30 V Tsp = 25 °C; VGS = 10 V; see Figure 1; [1]
  • 10.4 A see Figure 3 Ptot total power dissipation Static characteristics Tsp = 25 °C; see Figure 2