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PHM25NQ10T
TrenchMOS™ standard level FET
Rev. 03 — 11 September 2003
M3D879
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile.
1.3 Applications
s DC-to-DC primary side s Portable equipment applications.
www.DataSHeet4U.com Symbol
1 4 d g s
MBB076
1.4 Quick reference data
s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 30.7 A s RDSon ≤ 30 mΩ.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 mb Pinning - SOT685-1 (QLPAK), simplified outline and symbol Description source (s) gate (g) drain (d) mounting base, connected to drain (d)
mb
[1]
Simplified outline
ww.
PHM25NQ10T Datasheet
