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PHM30NQ10T - TrenchMOS standard level FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features

  • s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3.

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Full PDF Text Transcription

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www.DataSheet4U.com PHM30NQ10T TrenchMOS™ standard level FET Rev. 02 — 11 September 2003 M3D879 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s SOT96 (SO-8) footprint compatible s Surface mounted package s Low thermal resistance s Low profile. 1.3 Applications s DC-to-DC primary side s Portable equipment applications. www.DataSHeet4U.com d mb g 8 Bottom view 5 MBL585 MBB076 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 37.6 A s RDSon ≤ 20 mΩ 2.
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