PHN1011 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Low on-state resistance - Fast switching - High thermal cycling performance - Low-profile surface mount package - Logic level patible SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 11 A g RDS(ON) ≤ 11 mΩ (VGS = 10 V) RDS(ON) ≤ 13.5 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The bination of very low on-state resistance and low switching losses make this device the optimum choice in high speed puter motherboard d.c. to d.c....