PHN1011 Description
N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The bination of very low on-state resistance and low switching losses make this device the optimum choice in high speed puter motherboard d.c. RGS = 20 kΩ Ta = 25 ˚C Ta = 70 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 70 ˚C MIN.
PHN1011 Key Features
- Low on-state resistance
- Fast switching
- High thermal cycling performance
- Low-profile surface mount package
- Logic level patible