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PHN1011 - TrenchMOS transistor Logic level FET

General Description

N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology.

The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c.

to d.c.

Key Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • High thermal cycling performance.
  • Low-profile surface mount package.
  • Logic level compatible PHN1011 SYMBOL d QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low-profile surface mount package • Logic level compatible PHN1011 SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 11 A g RDS(ON) ≤ 11 mΩ (VGS = 10 V) RDS(ON) ≤ 13.5 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. converters.