PHN1018 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET Features - ’Trench’ technology - Low on-state resistance - Fast switching - Low-profile surface mount package - Logic level patible SYMBOL d QUICK REFERENCE DATA VDSS = 25 V ID = 9.6 A g RDS(ON) ≤ 18 mΩ (VGS = 10 V) RDS(ON) ≤ 21 mΩ (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. Application:- High frequency puter motherboard d.c. to d.c. converters The PHN1018 is supplied in the SOT96-1 (SO8) surface mounting package. PINNING PIN 1-3 4 5-8 DESCRIPTION source...