N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
| Part number | PHP10N10E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 71.22 KB |
| Description | PowerMOS transistor |
| Datasheet |
 PHP10N10E Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| PHP101NQ04T | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| PHP110NQ06LT | N-channel TrenchMOS logic level FET | NXP Semiconductors |
| PHP110NQ08LT | N-channel TrenchMOS logic level FET | NXP Semiconductors |
| PHP110NQ08T | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| PHP119NQ06T | N-channel TrenchMOS standard level FET | NXP Semiconductors |
| Part Number | Description |
|---|---|
| PHP10N40 | PowerMOS transistor |
| PHP10N40E | PowerMOS transistors Avalanche energy rated |
| PHP10N60E | PowerMOS transistors Avalanche energy rated |
| PHP101NQ03LT | TrenchMOS logic level FET |
| PHP1025 | P-channel enhancement mode MOS transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
