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PHP206 - Dual P-channel enhancement mode MOS transistor

General Description

Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Very low on-state resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP206 Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 05 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor driver • Power management • DC-DC converters • General purpose switching. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.