N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance.
| Part number | PHP6N10E |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 53.42 KB |
| Description | PowerMOS transistor |
| Datasheet |
 PHP6N10E Datasheet
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| Part Number | Description |
|---|---|
| PHP6N50E | PowerMOS transistors Avalanche energy rated |
| PHP6N60E | PowerMOS transistors Avalanche energy rated |
| PHP6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | PowerMOS transistors FREDFET/ Avalanche energy rated |
| PHP60N06LT | TrenchMOS transistor Logic level FET |
| PHP60N06T | TrenchMOS transistor Standard level FET |
| PHP63NQ03LT | logic level FET |
| PHP65N06LT | TrenchMOS transistor Logic level FET |
| PHP65N06T | TrenchMOS transistor Standard level FET |
| PHP66NQ03LT | N-channel TrenchMOS transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
