PHP6NA60E Datasheet | NXP Semiconductors

Philips Semiconductors Preliminary specification Power MOS transistors Low capacitance Avalanche energy rated Features - Repetitive Avalanche Rated - Fast switching - Low feedback capacitance - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 6.5 A RDS(ON) ≤ 1.2 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and puter monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6NA60E is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 600 600 ± 30 6.5 4.3 26 125 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy Repetitive avalanche energy1 Repetitive and non-repetitive avalanche current CONDITIONS Unclamped inductive load, ID = 6.5 A; VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. MAX. 570 9.5 6.5 UNIT m J m J A 1 pulse width and repetition rate limited by Tj max. January 1998 1 Rev 1.000 Philips Semiconductors Preliminary specification Power MOS transistors Low capacitance Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to...